PJMH190N60E1_T0_00601

Panjit International Inc

PJMH190N60E1_T0_00601

Datasheet

模拟与电源

600V/ 190MOHM / 20.6A/ EASY TO D

在产TO-247-3模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs180mOhm @ 9.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1410 pF @ 400 V
制造商Panjit International Inc.
安装类型Through Hole
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id3.8V @ 250µA

电气

漏源电压600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C20.6A (Tc)
最大功耗160W (Tc)

机械

封装Tube
Package / CaseTO-247-3
供应商器件封装TO-247AD

环境

工作温度-55°C~150°C(TJ)