PJL9606_R2_00001

Panjit International Inc

PJL9606_R2_00001

Datasheet

模拟与电源

MOSFET N/P-CH 30V 7A/6A 8SOP

在产8-SOIC (0.154", 3.90mm Width)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs19mOhm @ 6A, 10V, 30mOhm @ 4A, 10V
基础料号PJL9606
配置N and P-Channel Complementary
Gate Charge (Qg) (Max) @ Vgs4.8nC @ 4.5V, 7.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds429pF @ 25V, 846pF @ 15V
制造商Panjit International Inc.
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

电气

漏源电压30V
Current - Continuous Drain (Id) @ 25°C7A (Ta), 6A (Tc)
Power - Max1.7W (Ta)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case8-SOIC (0.154", 3.90mm Width)
供应商器件封装8-SOP

环境

工作温度-55°C ~ 150°C (TJ)