PJE8472B_R1_00001

Panjit International Inc

PJE8472B_R1_00001

Datasheet

模拟与电源

60V N-CHANNEL ENHANCEMENT MODE M

在产SOT-523模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs3Ohm @ 600mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.82 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds34 pF @ 25 V
制造商Panjit International Inc.
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id2.5V @ 250µA

电气

漏源电压60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C200mA (Ta)
最大功耗300mW (Ta)

机械

封装Tape & Reel (TR)
Package / CaseSOT-523
供应商器件封装SOT-523

环境

工作温度-55°C~150°C(TJ)