PJD9N10A_L2_00001

Name: PJD9N10A_L2_00001
Brand: Panjit International Inc

模拟与电源

100V N-CHANNEL MOSFET

在产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	152mOhm @ 4.5A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1021 pF @ 25 V
制造商	Panjit International Inc.
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA

漏源电压	100 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	2.4A (Ta), 9A (Tc)
最大功耗	2W (Ta), 31W (Tc)

工作温度	-55°C~150°C(TJ)