PJD2NA90_L2_00001

Panjit International Inc

PJD2NA90_L2_00001

模拟与电源

900V N-CHANNEL MOSFET

已停产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs6.4Ohm @ 1A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs11.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds396 pF @ 25 V
制造商Panjit International Inc.
安装类型Surface Mount
Product StatusNot For New Designs
技术MOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 250µA

电气

漏源电压900 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C2A (Ta)
最大功耗50W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件封装TO-252

环境

工作温度-55°C ~ 150°C (TJ)