PJD12P06-AU_L2_000A1

Panjit International Inc

PJD12P06-AU_L2_000A1

Datasheet

模拟与电源

60V P-CHANNEL ENHANCEMENT MODE M

已停产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs155mOhm @ 6A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs10.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds385 pF @ 25 V
制造商Panjit International Inc.
安装类型Surface Mount
Product StatusNot For New Designs
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

电气

漏源电压60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C2.6A (Ta), 12A (Tc)
最大功耗2W (Ta), 50W (Tc)

机械

封装Tape & Reel (TR)

环境

GradeAutomotive
工作温度-55°C ~ 150°C (TJ)
QualificationAEC-Q101