PJD11N06A_L2_00001

Panjit International Inc

PJD11N06A_L2_00001

Datasheet

模拟与电源

60V N-CHANNEL ENHANCEMENT MODE M

在产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs75mOhm @ 6A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds509 pF @ 15 V
制造商Panjit International Inc.
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

电气

漏源电压60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C3.7A (Ta), 11A (Tc)
最大功耗2W (Ta), 25W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件封装TO-252

环境

工作温度-55°C ~ 150°C (TJ)