PJD10N10_L2_00001

Name: PJD10N10_L2_00001
Brand: Panjit International Inc

模拟与电源

100V N-CHANNEL MOSFET

已停产TO-252-3, DPAK (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	130mOhm @ 5A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	707 pF @ 30 V
制造商	Panjit International Inc.
安装类型	Surface Mount
包装	Tape & Reel (TR)
产品状态	Not For New Designs
技术	MOSFET (Metal Oxide)
Vgs (Max)	±25V
Vgs(th) (Max) @ Id	3.5V @ 250µA

漏源电压	100 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Current - Continuous Drain (Id) @ 25°C	2.6A (Ta), 34.7A (Tc)
最大功耗	2W (Ta), 34.7W (Tc)

Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
供应商器件封装	TO-252AA

工作温度	-55°C ~ 150°C (TJ)