PCDB0865G1_R2_00001

Panjit International Inc

PCDB0865G1_R2_00001

Datasheet

模拟与电源

DIODE SIL CARBIDE 650V 8A TO263

在产模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号PCDB0865
Capacitance @ Vr, F296pF @ 1V, 1MHz
制造商Panjit International Inc.
安装类型Surface Mount
Product StatusActive
Reverse Recovery Time (trr)0 ns
技术SiC (Silicon Carbide) Schottky

电气

Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max) @ If1.7 V @ 8 A
Current - Average Rectified (Io)8A
Current - Reverse Leakage @ Vr60 µA @ 650 V
速度No Recovery Time > 500mA (Io)

机械

封装Tape & Reel (TR) Cut Tape (CT)
供应商器件封装TO-263

环境

Operating Temperature - Junction-55°C ~ 175°C