通用
| Rds On (Max) @ Id, Vgs | 112mOhm @ 5A, 4.5V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 20 V |
| 制造商 | onsemi |
| 安装类型 | Through Hole |
| Product Status | Obsolete |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| 漏源电压 | 40 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| 最大功耗 | 1W (Ta), 15W (Tc) |
机械
| 封装 | Bulk |
|---|---|
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| 供应商器件封装 | IPAK/TP |
环境
| 工作温度 | 150°C(TJ) |
|---|