RFD10P03LSM

onsemi

RFD10P03LSM

模拟与电源

MOSFET P-CH 30V 10A TO252-3

停产/老旧TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs200mOhm @ 10A, 5V
基础料号RFD10
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1035 pF @ 25 V
制造商onsemi
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 250µA

电气

漏源电压30 V
Current - Continuous Drain (Id) @ 25°C10A (Tc)

机械

封装Tube
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件封装TO-252AA