NVMTS4D3N15MC

onsemi

NVMTS4D3N15MC

Datasheet

模拟与电源

SINGLE N-CHANNEL POWER MOSFET 00

在产8-PowerTDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs4.45mOhm @ 95A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6514 pF @ 75 V
制造商onsemi
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 521µA

电气

漏源电压150 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C21A (Ta), 165A (Tc)
最大功耗5W (Ta), 292W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)

环境

GradeAutomotive
工作温度-55°C ~ 175°C (TJ)
QualificationAEC-Q101