NVMFWS2D3P04M8LT1G

onsemi

NVMFWS2D3P04M8LT1G

Datasheet

模拟与电源

MV8 P INITIAL PROGRAM

在产8-PowerTDFN, 5 Leads模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs2.2mOhm @ 30A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5985 pF @ 20 V
制造商onsemi
安装类型Surface Mount
Product StatusActive
系列Automotive, AEC-Q101
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.4V @ 2.7mA

电气

漏源电压40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C31A (Ta), 222A (Tc)
最大功耗3.8W (Ta), 205W (Tc)

机械

封装Tape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
供应商器件封装5-DFN (5x6) (8-SOFL)

环境

工作温度-55°C~175°C(TJ)