NVMFWS003P03P8ZT1G

onsemi

NVMFWS003P03P8ZT1G

Datasheet

模拟与电源

PFET SO8FL -30V 3MO

在产8-PowerTDFN, 5 Leads模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs1.8mOhm @ 23A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs167 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds12120 pF @ 15 V
制造商onsemi
安装类型Surface Mount, Wettable Flank
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id3V @ 250µA

电气

漏源电压30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C35.7A (Ta), 234A (Tc)
最大功耗3.9W (Ta), 168.7W (Tc)

机械

封装Tape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
供应商器件封装5-DFNW (4.9x5.9) (8-SOFL-WF)

环境

工作温度-55°C~175°C(TJ)