NVMFS3D0P04M8LT1G

onsemi

NVMFS3D0P04M8LT1G

Datasheet

模拟与电源

MV8 P INITIAL PROGRAM

在产8-PowerTDFN, 5 Leads模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs2.7mOhm @ 30A,10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5827 pF @ 20 V
制造商onsemi
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.4V @ 2mA

电气

漏源电压40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C28A (Ta), 183A (Tc)
最大功耗3.9W (Ta), 171W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)

环境

GradeAutomotive
工作温度-55°C ~ 175°C (TJ)
QualificationAEC-Q101