NVMFD5C672NLWFT1G

onsemi

NVMFD5C672NLWFT1G

Datasheet

模拟与电源

MOSFET 2N-CH 60V 12A/49A 8DFN

在产8-PowerTDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs11.9mOhm @ 10A, 10V
配置2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs5.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds793pF @ 25V
制造商onsemi
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.2V @ 30µA

电气

漏源电压60V
Current - Continuous Drain (Id) @ 25°C12A (Ta), 49A (Tc)
Power - Max3.1W (Ta), 45W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerTDFN
供应商器件封装8-DFN (5x6) Dual Flag (SO8FL-Dual)

环境

GradeAutomotive
工作温度-55°C ~ 175°C (TJ)
QualificationAEC-Q101