NVD6820NLT4G

onsemi

NVD6820NLT4G

Datasheet

模拟与电源

MOSFET N-CH 90V 10A/50A DPAK

停产/老旧TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs16.7mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds4209 pF @ 25 V
制造商onsemi
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

电气

漏源电压90 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C10A (Ta), 50A (Tc)
最大功耗4W (Ta), 100W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)

环境

GradeAutomotive
工作温度-55°C ~ 175°C (TJ)
QualificationAEC-Q101