NVD5865NLT4G

Name: NVD5865NLT4G
Brand: onsemi

模拟与电源

MOSFET N-CH 60V 10A/46A DPAK

停产/老旧TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	16mOhm @ 19A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1400 pF @ 25 V
制造商	onsemi
安装类型	Surface Mount
Product Status	Obsolete
系列	Automotive, AEC-Q101
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2V @ 250µA

漏源电压	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	10A (Ta), 46A (Tc)
最大功耗	3.1W (Ta), 71W (Tc)

工作温度	-55°C~175°C(TJ)