NVBLS1D7N08H

onsemi

NVBLS1D7N08H

Datasheet

模拟与电源

MOSFET - POWER, SINGLE N-CHANNEL

在产8-PowerSFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs1.7mOhm @ 80A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7675 pF @ 40 V
制造商onsemi
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 479µA

电气

漏源电压80 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C33A (Ta), 241.3A (Tc)
最大功耗4.4W (Ta), 237.5W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)

环境

GradeAutomotive
工作温度-55°C ~ 175°C (TJ)
QualificationAEC-Q101