NVBGS1D2N08H

onsemi

NVBGS1D2N08H

Datasheet

模拟与电源

T8-80V IN SUZHOU D2PAK7L FOR AUT

停产/老旧模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs1.34mOhm @ 50A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds10830 pF @ 40 V
制造商onsemi
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 650µA

电气

漏源电压80 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C43A (Ta), 290A (Tc)
最大功耗5.7W (Ta), 259W (Tc)

机械

封装Tape & Reel (TR)

环境

GradeAutomotive
工作温度-55°C ~ 175°C (TJ)
QualificationAEC-Q101