NVB150N65S3F

Name: NVB150N65S3F
Brand: onsemi

模拟与电源

MOSFET N-CH 650V 24A D2PAK-3

在产TO-263-3, D²Pak (2 Leads + Tab), TO-263AB模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	150mOhm @ 12A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1999 pF @ 400 V
制造商	onsemi
安装类型	Surface Mount
Product Status	Active
系列	SuperFET® III, FRFET®
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	5V @ 540µA

漏源电压	650 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	24A (Tc)
最大功耗	192W

封装	Tape & Reel (TR) Cut Tape (CT)
供应商器件封装	D²PAK-3 (TO-263-3)