来自已导入产品 Attributes 的结构化电气、机械和环境参数。
| Rds On (Max) @ Id, Vgs | 120mOhm @ 2.4A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 9.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 637 pF @ 50 V |
| 制造商 | onsemi |
| 安装类型 | Surface Mount |
| Product Status | Active |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 45µA |
| 漏源电压 | 100 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta), 13A (Tc) |
| 最大功耗 | 900mW (Ta), 41W (Tc) |
| 封装 | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 8-PowerWDFN |
| 供应商器件封装 | 8-WDFN (3.3x3.3) |
| 工作温度 | -55°C ~ 150°C (TJ) |
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