NTTFS008P03P8Z

onsemi

NTTFS008P03P8Z

Datasheet

模拟与电源

MOSFET P-CH 30V 22A/96A 8PQFN

在产8-PowerWDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs3.8mOhm @ 18A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5600 pF @ 15 V
制造商onsemi
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id3V @ 250µA

电气

漏源电压30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C22A (Ta), 96A (Tc)
最大功耗2.36W (Ta), 50W (Tc)

机械

封装Tape & Reel (TR)
Package / Case8-PowerWDFN
供应商器件封装8-PQFN (3.3x3.3)

环境

工作温度-55°C~150°C(TJ)