NTTBC070NP10M5L

onsemi

NTTBC070NP10M5L

Datasheet

模拟与电源

MOSFET N/P-CH 100V 3.5A 8WDFN

在产8-PowerWDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs70mOhm @ 1.3A, 10V, 186mOhm @ 2.2A, 10V
基础料号NTTBC070
配置N and P-Channel
Gate Charge (Qg) (Max) @ Vgs5.6nC @ 10V, 7.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds252pF @ 50V, 256pF @ 50V
制造商onsemi
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 24µA, 4V @ 40µA

电气

漏源电压100V
Current - Continuous Drain (Id) @ 25°C3.5A (Ta), 9.5A (Tc), 2.2A (Ta), 5A (Tc)
Power - Max1.9W (Ta), 14W (Tc), 1.9W (Ta), 10W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerWDFN
供应商器件封装8-WDFN (3x3)

环境

工作温度-55°C ~ 150°C (TJ)