NTMSD2P102R2

onsemi

NTMSD2P102R2

模拟与电源

MOSFET P-CH 20V 2.3A 8SOIC

停产/老旧8-SOIC (0.154", 3.90mm Width)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs90mOhm @ 2.4A, 4.5V
基础料号NTMSD2
FET FeatureSchottky Diode (Isolated)
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds750 pF @ 16 V
制造商onsemi
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)

电气

漏源电压20 V
Current - Continuous Drain (Id) @ 25°C2.3A (Ta)

机械

封装Tape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
供应商器件封装8-SOIC