NTMFS4841NHT3G

onsemi

NTMFS4841NHT3G

模拟与电源

MOSFET N-CH 30V 8.6A/59A 5DFN

停产/老旧8-PowerTDFN, 5 Leads模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs7mOhm @ 30A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs33 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds2113 pF @ 12 V
制造商onsemi
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

电气

漏源电压30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C8.6A (Ta), 59A (Tc)
最大功耗870mW (Ta), 41.7W (Tc)

机械

封装Tape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
供应商器件封装5-DFN (5x6) (8-SOFL)

环境

工作温度-55°C~150°C(TJ)