NTMFS4833NAT1G

onsemi

NTMFS4833NAT1G

模拟与电源

MOSFET N-CH 30V 16A/191A 5DFN

停产/老旧8-PowerTDFN, 5 Leads模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs1.9mOhm @ 30A, 10V
基础料号NTMFS4833
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs150 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds7500 pF @ 12 V
制造商onsemi
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

电气

漏源电压30 V
Current - Continuous Drain (Id) @ 25°C16A (Ta), 191A (Tc)

机械

封装Tape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
供应商器件封装5-DFN (5x6) (8-SOFL)