NTMD6N02R2

onsemi

NTMD6N02R2

Datasheet

模拟与电源

MOSFET 2N-CH 20V 3.92A 8SOIC

停产/老旧8-SOIC (0.154", 3.90mm Width)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs35mOhm @ 6A, 4.5V
基础料号NTMD6
配置2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1100pF @ 16V
制造商onsemi
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.2V @ 250µA

电气

漏源电压20V
Current - Continuous Drain (Id) @ 25°C3.92A
Power - Max730mW

机械

封装Tape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
供应商器件封装8-SOIC

环境

工作温度-55°C ~ 150°C (TJ)