NTMC083NP10M5L

onsemi

NTMC083NP10M5L

Datasheet

模拟与电源

MOSFET N/P-CH 100V 2.9A 8SOIC

在产8-SOIC (0.154", 3.90mm Width)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs83mOhm @ 1.5A, 10V, 131mOhm @ 1.5A, 10V
基础料号NTMC083
配置N and P-Channel
Gate Charge (Qg) (Max) @ Vgs5nC @ 10V, 8.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds222pF @ 50V, 525pF @ 50V
制造商onsemi
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)

电气

漏源电压100V
Current - Continuous Drain (Id) @ 25°C2.9A (Ta), 4.1A (Tc), 2.4A (Ta), 3.3A (Tc)
Power - Max1.6W (Ta), 3.1W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case8-SOIC (0.154", 3.90mm Width)
供应商器件封装8-SOIC

环境

工作温度-55°C ~ 150°C (TJ)