NTH4L028N170M1

Name: NTH4L028N170M1
Brand: onsemi

模拟与电源

SIC MOSFET 1700 V 28 MOHM M1 SER

在产TO-247-4模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	40mOhm @ 60A, 20V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	200 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds	4230 pF @ 800 V
制造商	onsemi
安装类型	Through Hole
Product Status	Active
技术	SiC (Silicon Carbide Junction Transistor)
Vgs (Max)	+25V, -15V
Vgs(th) (Max) @ Id	4.3V @ 20mA

漏源电压	1700 V
Drive Voltage (Max Rds On, Min Rds On)	20V
Current - Continuous Drain (Id) @ 25°C	81A (Tc)
最大功耗	535W (Tc)

工作温度	-55°C~175°C(TJ)