NTH4L015N065SC1

Name: NTH4L015N065SC1
Brand: onsemi

模拟与电源

SILICON CARBIDE MOSFET, NCHANNEL

在产TO-247-4模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	18mOhm @ 75A, 18V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	283 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds	4790 pF @ 325 V
制造商	onsemi
安装类型	Through Hole
Product Status	Active
技术	SiCFET (Silicon Carbide)
Vgs (Max)	+22V, -8V
Vgs(th) (Max) @ Id	4.3V @ 25mA

漏源电压	650 V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Current - Continuous Drain (Id) @ 25°C	142A (Tc)
最大功耗	500W (Tc)

工作温度	-55°C ~ 175°C (TJ)