NTF2955PT1G

onsemi

NTF2955PT1G

模拟与电源

MOSFET P-CH 60V 1.7A SOT-223

停产/老旧TO-261-4, TO-261AA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs185mOhm @ 2.4A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds492 pF @ 25 V
制造商onsemi
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 1mA

电气

漏源电压60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C1.7A (Ta)
最大功耗1W (Ta)

机械

封装Tape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
供应商器件封装SOT-223 (TO-261)

环境

工作温度-55°C~175°C(TJ)