NTD70N03R-001

onsemi

NTD70N03R-001

Datasheet

模拟与电源

MOSFET N-CH 25V 10A/32A IPAK

停产/老旧TO-251-3 Short Leads, IPAK, TO-251AA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs8mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs13.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1333 pF @ 20 V
制造商onsemi
安装类型Through Hole
包装Tube
产品状态停产/老旧
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 250µA

电气

漏源电压25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C10A (Ta), 32A (Tc)
最大功耗1.36W (Ta), 62.5W (Tc)

机械

Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
供应商器件封装IPAK

环境

工作温度-55°C ~ 175°C (TJ)