NTD4969N-1G

onsemi

NTD4969N-1G

Datasheet

模拟与电源

MOSFET N-CH 30V 41A IPAK-4

停产/老旧TO-251-3 Short Leads, IPak, TO-251AA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs9mOhm @ 30A, 10V
基础料号NTD49
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds837 pF @ 15 V
制造商onsemi
安装类型Through Hole
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

电气

漏源电压30 V
Current - Continuous Drain (Id) @ 25°C9.4A (Ta), 41A (Tc)

机械

封装Tube
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
供应商器件封装I-PAK