NTD4909N-1G

Name: NTD4909N-1G
Brand: onsemi

模拟与电源

MOSFET N-CH 30V 8.8A/41A IPAK

停产/老旧TO-251-3 Short Leads, IPak, TO-251AA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	8mOhm @ 30A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1314 pF @ 15 V
制造商	onsemi
安装类型	Through Hole
Product Status	Obsolete
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.2V @ 250µA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	8.8A (Ta), 41A (Tc)
最大功耗	1.37W (Ta), 29.4W (Tc)

工作温度	-55°C~175°C(TJ)