NTD360N65S3H

onsemi

NTD360N65S3H

Datasheet

模拟与电源

POWER MOSFET, N-CHANNEL, SUPERFE

已停产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs360mOhm @ 5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds916 pF @ 400 V
制造商onsemi
安装类型Surface Mount
Product StatusNot For New Designs
系列SuperFET® III
技术MOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 700µA

电气

漏源电压650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
最大功耗83W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件封装TO-252 (DPAK)

环境

工作温度-55°C ~ 150°C (TJ)