NTC020N120SC1

Name: NTC020N120SC1
Brand: onsemi

模拟与电源

SIC MOS WAFER SALES 20MOHM 1200V

停产/老旧Die模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	28mOhm @ 60A, 20V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	203 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds	2890 pF @ 800 V
制造商	onsemi
安装类型	Surface Mount
Product Status	Obsolete
技术	SiCFET (Silicon Carbide)
Vgs (Max)	+25V, -15V
Vgs(th) (Max) @ Id	4.3V @ 20mA

漏源电压	1200 V
Drive Voltage (Max Rds On, Min Rds On)	20V
Current - Continuous Drain (Id) @ 25°C	103A (Tc)
最大功耗	535W (Tc)

工作温度	-55°C ~ 175°C (TJ)