NTBGS002N06C

Name: NTBGS002N06C
Brand: onsemi

模拟与电源

POWER MOSFET, 60 V, 2.2 M?, 211

在产模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	2.1mOhm @ 45A, 12V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	62.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	4620 pF @ 30 V
制造商	onsemi
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 225µA

漏源电压	60 V
Drive Voltage (Max Rds On, Min Rds On)	10V, 12V
Current - Continuous Drain (Id) @ 25°C	30A (Ta), 211A (Tc)
最大功耗	3.7W (Ta), 178W (Tc)

封装	Tape & Reel (TR) Cut Tape (CT)
供应商器件封装	TO-263 (D2PAK)

工作温度	-55°C ~ 175°C (TJ)