NTBG060N090SC1

onsemi

NTBG060N090SC1

Datasheet

模拟与电源

MOSFET N-CH 900V 5.8/44A D2PAK-7

在产TO-263-8, D2PAK (7 Leads + Tab), TO-263CA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs84mOhm @ 20A, 15V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs88 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds1800 pF @ 450 V
制造商onsemi
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)+19V, -10V
Vgs(th) (Max) @ Id4.3V @ 5mA

电气

漏源电压900 V
Drive Voltage (Max Rds On, Min Rds On)15V
Current - Continuous Drain (Id) @ 25°C5.8A (Ta), 44A (Tc)
最大功耗3.6W (Ta), 211W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
供应商器件封装D2PAK-7

环境

工作温度-55°C ~ 175°C (TJ)