NTBG060N065SC1

Name: NTBG060N065SC1
Brand: onsemi

模拟与电源

SILICON CARBIDE (SIC) MOSFET - 4

在产TO-263-8, D²Pak (7 Leads + Tab), TO-263CA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	70mOhm @ 20A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds	1473 pF @ 325 V
制造商	onsemi
安装类型	Surface Mount
Product Status	Active
技术	SiC (Silicon Carbide Junction Transistor)
Vgs (Max)	+22V, -8V
Vgs(th) (Max) @ Id	4.3V @ 6.5mA

漏源电压	650 V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Current - Continuous Drain (Id) @ 25°C	46A (Tc)
最大功耗	170W (Tc)

工作温度	-55°C~175°C(TJ)