NTBG025N065SC1

Name: NTBG025N065SC1
Brand: onsemi

模拟与电源

SILICON CARBIDE (SIC) MOSFET - 1

在产TO-263-8, D²Pak (7 Leads + Tab), TO-263CA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	28.5mOhm @ 45A, 18V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	164 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds	3480 pF @ 325 V
制造商	onsemi
安装类型	Surface Mount
Product Status	Active
技术	SiC (Silicon Carbide Junction Transistor)
Vgs (Max)	+22V, -8V
Vgs(th) (Max) @ Id	4.3V @ 15.5mA

漏源电压	650 V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Current - Continuous Drain (Id) @ 25°C	106A (Tc)
最大功耗	395W (Tc)

工作温度	-55°C~175°C(TJ)