NTB150N65S3HF

onsemi

NTB150N65S3HF

Datasheet

模拟与电源

MOSFET N-CH 650V 24A D2PAK-3

已停产TO-263-3, D2PAK (2 Leads + Tab), TO-263AB模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs150mOhm @ 12A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1985 pF @ 400 V
制造商onsemi
安装类型Surface Mount
Product StatusNot For New Designs
系列FRFET®, SuperFET® III
技术MOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 540µA

电气

漏源电压650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C24A (Tc)
最大功耗192W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
供应商器件封装TO-263 (D2PAK)

环境

工作温度-55°C ~ 150°C (TJ)