NDT452P

onsemi

NDT452P

模拟与电源

MOSFET P-CH 30V 3A SOT-223-4

停产/老旧TO-261-4, TO-261AA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs180mOhm @ 3A, 10V
基础料号NDT452
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds525 pF @ 10 V
制造商onsemi
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA

电气

漏源电压30 V
Current - Continuous Drain (Id) @ 25°C3A (Ta)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseTO-261-4, TO-261AA
供应商器件封装SOT-223-4