NDT02N40T1G

onsemi

NDT02N40T1G

模拟与电源

MOSFET N-CH 400V 400MA SOT223

停产/老旧TO-261-4, TO-261AA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs5.5Ohm @ 220mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds121 pF @ 25 V
制造商onsemi
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 250µA

电气

漏源电压400 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C400mA (Tc)
最大功耗2W (Tc)

机械

封装Tape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
供应商器件封装SOT-223 (TO-261)