NDT01N60T1G

onsemi

NDT01N60T1G

Datasheet

模拟与电源

MOSFET N-CH 600V 400MA SOT223

停产/老旧TO-261-4, TO-261AA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs8.5Ohm @ 200mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds160 pF @ 25 V
制造商onsemi
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id3.7V @ 50µA

电气

漏源电压600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C400mA (Tc)
最大功耗2.5W (Tc)

机械

封装Tape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
供应商器件封装SOT-223 (TO-261)

环境

工作温度-55°C ~ 150°C (TJ)