NDD03N80Z-1G

Name: NDD03N80Z-1G
Brand: onsemi

模拟与电源

MOSFET N-CH 800V 2.9A IPAK

停产/老旧TO-251-3 Short Leads, IPAK, TO-251AA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	4.5Ohm @ 1.2A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	440 pF @ 25 V
制造商	onsemi
安装类型	Through Hole
Product Status	Obsolete
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4.5V @ 50µA

漏源电压	800 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	2.9A (Tc)
最大功耗	96W (Tc)

工作温度	-55°C ~ 150°C (TJ)