NDB6060L

onsemi

NDB6060L

Datasheet

模拟与电源

MOSFET N-CH 60V 48A D2PAK

停产/老旧TO-263-3, D²Pak (2 Leads + Tab), TO-263AB模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs20mOhm @ 24A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds2000 pF @ 25 V
制造商onsemi
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)±16V
Vgs(th) (Max) @ Id2V @ 250µA

电气

漏源电压60 V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Current - Continuous Drain (Id) @ 25°C48A (Tc)
最大功耗100W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
供应商器件封装D²PAK (TO-263)

环境

工作温度-65°C ~ 175°C (TJ)