MTD6N15T4

onsemi

MTD6N15T4

Datasheet

模拟与电源

MOSFET N-CH 150V 6A DPAK

停产/老旧TO-252-3, DPAK (2 Leads + Tab), SC-63模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs300mOhm @ 3A, 10V
基础料号MTD6N
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1200 pF @ 25 V
制造商onsemi
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4.5V @ 1mA

电气

漏源电压150 V
Current - Continuous Drain (Id) @ 25°C6A (Tc)

机械

封装Cut Tape (CT)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
供应商器件封装DPAK