MTB2P50ET4G

onsemi

MTB2P50ET4G

Datasheet

模拟与电源

MOSFET P-CH 500V 2A D2PAK

停产/老旧TO-263-3, D²Pak (2 Leads + Tab), TO-263AB模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs6Ohm @ 1A, 10V
基础料号MTB2P
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1183 pF @ 25 V
制造商onsemi
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA

电气

漏源电压500 V
Current - Continuous Drain (Id) @ 25°C2A (Tc)

机械

封装Tape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
供应商器件封装D²PAK