MCH6660-TL-H

onsemi

MCH6660-TL-H

Datasheet

模拟与电源

MOSFET N/P-CH 20V 2A/1.5A 6MCPH

停产/老旧6-SMD, Flat Leads模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs136mOhm @ 1A, 4.5V
基础料号MCH6660
配置N and P-Channel
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs1.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds128pF @ 10V
制造商onsemi
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)

电气

漏源电压20V
Current - Continuous Drain (Id) @ 25°C2A, 1.5A
Power - Max800mW

机械

封装Tape & Reel (TR)
Package / Case6-SMD, Flat Leads
供应商器件封装6-MCPH

环境

工作温度150°C (TJ)